Silicon
Kasper J S, Richards S M
Acta Crystallographica 17 (1964) 752-755
The crystal structures of new forms of silicon and germanium
Locality: synthetic
_database_code_amcsd 0009282
6.636 6.636 6.636 90 90 90 Ia3
atom x y z Biso
Si .1003 .1003 .1003 .89
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Silicon
Wyckoff R W G
Crystal Structures 1 (1963) 7-83
Second edition. Interscience Publishers, New York, New York
Sample at T = 300 K
_database_code_amcsd 0011243
5.43070 5.43070 5.43070 90 90 90 Fd3m
atom x y z
Si 0 0 0
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Silicon
Wyckoff R W G
Crystal Structures 1 (1963) 7-83
Second edition. Interscience Publishers, New York, New York
Sample at T = 1573 K
_database_code_amcsd 0011244
5.43070 5.43070 5.43070 90 90 90 Fd3m
atom x y z
Si 0 0 0
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Silicon
Hom T, Kiszenick W, Post B
Journal of Applied Crystallography 8 (1975) 457-458
Accurate lattice constants from multiple reflection mesurements II.
lattice constants of germanium, silicon and diamond
Locality: synthetic
Sample: at T = 25 C
_database_code_amcsd 0012843
5.430941 5.430941 5.430941 90 90 90 Fd3m
atom x y z
Si 0 0 0
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Silicon
Dutta B N
Physica Status Solidi 2 (1962) 984-987
Lattice constants and thermal expansion of silicon up to 900 C by X-ray method
Locality: synthetic
Sample: at T = 25 C
_database_code_amcsd 0015103
5.4304 5.4304 5.4304 90 90 90 Fd3m
atom x y z
Si 0 0 0
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Silicon
Dutta B N
Physica Status Solidi 2 (1962) 984-987
Lattice constants and thermal expansion of silicon up to 900 C by X-ray method
Locality: synthetic
Sample: at T = 345 C
_database_code_amcsd 0015104
5.4370 5.4370 5.4370 90 90 90 Fd3m
atom x y z
Si 0 0 0
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Silicon
Dutta B N
Physica Status Solidi 2 (1962) 984-987
Lattice constants and thermal expansion of silicon up to 900 C by X-ray method
Locality: synthetic
Sample: at T = 525 C
_database_code_amcsd 0015105
5.4410 5.4410 5.4410 90 90 90 Fd3m
atom x y z
Si 0 0 0
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Silicon
Dutta B N
Physica Status Solidi 2 (1962) 984-987
Lattice constants and thermal expansion of silicon up to 900 C by X-ray method
Locality: synthetic
Sample: at T = 615 C
_database_code_amcsd 0015106
5.4432 5.4432 5.4432 90 90 90 Fd3m
atom x y z
Si 0 0 0
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Silicon
Dutta B N
Physica Status Solidi 2 (1962) 984-987
Lattice constants and thermal expansion of silicon up to 900 C by X-ray method
Locality: synthetic
Sample: at T = 700 C
_database_code_amcsd 0015107
5.4455 5.4455 5.4455 90 90 90 Fd3m
atom x y z
Si 0 0 0
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Silicon
Dutta B N
Physica Status Solidi 2 (1962) 984-987
Lattice constants and thermal expansion of silicon up to 900 C by X-ray method
Locality: synthetic
Sample: at T = 785 C
_database_code_amcsd 0015108
5.4480 5.4480 5.4480 90 90 90 Fd3m
atom x y z
Si 0 0 0
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Silicon
Dutta B N
Physica Status Solidi 2 (1962) 984-987
Lattice constants and thermal expansion of silicon up to 900 C by X-ray method
Locality: synthetic
Sample: at T = 878 C
_database_code_amcsd 0015109
5.4515 5.4515 5.4515 90 90 90 Fd3m
atom x y z
Si 0 0 0
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Silicon
McMahon M I, Nelmes R J
Physical Review B47 (1993) 8337-8340
New high-pressure phase of Si
Locality: synthetic
Sample: structure exists between 13 GPa to 18 GPa
Note: intermediate structure between those of Si II and Si V
_database_code_amcsd 0015170
4.737 4.502 2.550 90 90 90 Imma
atom x y z
Si 0 .25 .193
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Silicon
Duclos S J, Vohra Y K, Ruoff A L
Physical Review Letters 58 (1987) 775-777
hcp-to-fcc transition in silicon at 78 GPa and studies to 100 GPa
Locality: synthetic
Sample: at P = 87 GPa
Note: fcc structure stable above 78 GPa
_database_code_amcsd 0015275
3.34 3.34 3.34 90 90 90 Fm3m
atom x y z
Si 0 0 0
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Silicon
Hanfland M, Schwarz U, Syassen K, Takemura K
Physical Review Letters 82 (1999) 1197-1200
Crystal structure of the high-pressure phase silicon VI
Locality: synthetic
Sample: at P = 38.4 GPa
Note: phase VI
_database_code_amcsd 0015281
8.0242 4.7961 4.7760 90 90 90 Cmca
atom x y z
Si1 0 .173 .328
Si2 .218 0 0
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Silicon
Hanfland M, Schwarz U, Syassen K, Takemura K
Physical Review Letters 82 (1999) 1197-1200
Crystal structure of the high-pressure phase silicon VI
Locality: synthetic
Sample: at P = 42.5 GPa
Note: phase VI
_database_code_amcsd 0015282
7.9686 4.7759 4.7546 90 90 90 Cmca
atom x y z
Si1 0 .172 .328
Si2 .219 0 0
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Silicon
Hanfland M, Schwarz U, Syassen K, Takemura K
Physical Review Letters 82 (1999) 1197-1200
Crystal structure of the high-pressure phase silicon VI
Locality: synthetic
Sample: at P = 45.5 GPa
Note: phase VI
_database_code_amcsd 0015283
7.9200 4.7586 4.7361 90 90 90 Cmca
atom x y z
Si1 0 .173 .324
Si2 .224 0 0
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Silicon
Olijnyk H, Sikka S K, Holzapfel W B
Physics Letters 103A (1984) 137-140
Structural phase transitions in Si and Ge under pressures up to 50 GPa
Locality: synthetic
Sample: at P = 19.5 GPa
Note: phase V, structure stable between 16 GPa & 34 GPa
_database_code_amcsd 0015303
2.527 2.527 2.373 90 90 120 P6/mmm
atom x y z
Si 0 0 0
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Silicon
Olijnyk H, Sikka S K, Holzapfel W B
Physics Letters 103A (1984) 137-140
Structural phase transitions in Si and Ge under pressures up to 50 GPa
Locality: synthetic
Sample: at P = 43 GPa
Note: phase VII, structure stable above 43 GPa
_database_code_amcsd 0015304
2.444 2.444 4.152 90 90 120 P6_3/mmc
atom x y z
Si 1/3 2/3 .25
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