Silicon Diffraction data computed using the structure from the paper listed below, along with the cell parameters refined from the powder pattern of R050145 Wyckoff R W G Crystal Structures 1 (1963) 7-83 Second edition. Interscience Publishers, New York, New York Sample at T = 300 K CELL PARAMETERS: 5.4299 5.4299 5.4299 90.000 90.000 90.000 SPACE GROUP: Fd3m ATOM X Y Z OCCUPANCY ISO(B) Si 0.00000 0.00000 0.00000 1.000 0.500 X-RAY WAVELENGTH: 1.541838 BOUNDS ON TWO THETA: 5.0 90.0 LIMITS IMPOSED ON THE INDICES ARE: +/- 4 +/- 4 +/- 4 MAX. ABS. INTENSITY / VOLUME**2: 32.68626639 The INTENSITY cut off value is 1.00 2-THETA INTENSITY D-SPACING H K L 28.47 100.00 3.1350 1 1 1 47.35 64.31 1.9198 2 2 0 56.18 37.31 1.6372 3 1 1 69.21 9.58 1.3575 4 0 0 76.47 14.14 1.2457 3 3 1 88.14 19.38 1.1084 4 2 2 ================================================================================ XPOW Copyright 1993 Bob Downs, Ranjini Swaminathan and Kurt Bartelmehs For reference, see Downs et al. (1993) American Mineralogist 78, 1104-1107.